HN58V65A-SR 데이터 시트보기 (PDF) - Renesas Electronics
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HN58V65A-SR
Renesas Electronics
HN58V65A-SR Datasheet PDF : 28 Pages
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HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Write Cycle 1 (2.7 ≤ VCC < 4.5 V)
Parameter
Symbol Min*3 Typ Max Unit Test conditions
Address setup time
tAS
0
ns
Address hold time
tAH
50
ns
CE to write setup time (WE controlled)
tCS
0
ns
CE hold time (WE controlled)
tCH
0
ns
WE to write setup time (CE controlled)
tWS
0
ns
WE hold time (CE controlled)
tWH
0
ns
OE to write setup time
tOES
0
ns
OE hold time
tOEH
0
ns
Data setup time
tDS
50
ns
Data hold time
tDH
0
ns
WE pulse width (WE controlled)
tWP
200
ns
CE pulse width (CE controlled)
tCW
200
ns
Data latch time
tDL
100
ns
Byte load cycle
tBLC
0.3
30
µs
Byte load window
Write cycle time
tBL
100
µs
tWC
10*4 ms
Time to device busy
Write start time
Reset protect time*2
Reset high time*2, 6
tDB
120
ns
tDW
0*5
ns
tRP
100
µs
tRES
1
µs
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and
are no longer driven.
2. This function is supported by only the HN58V66A series.
3. Use this device in longer cycle than this value.
4. tWC must be longer than this value unless polling techniques or RDY/Busy are used. This device
automatically completes the internal write operation within this value.
5. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy are used.
6. This parameter is sampled and not 100% tested.
7. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
WE.
8. A6 through A12 are page addresses and these addresses are latched at the first falling edge of
CE.
9. See AC read characteristics.
Rev.3.00, Feb.02.2004, page 8 of 26
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