FDS4080N7 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4080N7 Datasheet PDF : 7 Pages
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February 2004
FDS4080N7
40V N-Channel FLMP PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 13 A, 40 V
RDS(ON) = 10 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching (Qg = 30 nC )
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4080N7
FDS4080N7
13’’
Ratings
40
± 20
13
60
3.9
–55 to +150
38
1
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDS4080N7 Rev D1 (W)
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