FDS4080N3 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS4080N3

40V N-Channel FLMP PowerTrench® MOSFET

Fairchild Semiconductor 

February 2004

FDS4080N3

40V N-Channel FLMP PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low RDS(ON) in a small package.

Applications

• Synchronous rectifier

• DC/DC converter

Features

• 13 A, 40 V

RDS(ON) = 10.5 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Fast switching (Qg = 30 nC )

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

NDCDNCDNCDNC

D

FBLoMttPomSOle-8ss

SO-8

Pin 1SO-8

SS SS SSGG

Bottom-side

5

Drain Contact

6

7

8

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

PD

TJ, TSTG

Power Dissipation for Single Operation

(Note 1a)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Ambient

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4080N3

FDS4080N3

13’’

Ratings

40

± 20

13

60

3.0

–55 to +150

40

0.5

Tape width

12mm

2004 Fairchild Semiconductor Corporation

4

3

2

1

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

2500 units

FDS4080N3 Rev E1 (W)

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