5962R9569002VCC 데이터 시트보기 (PDF) - Intersil

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5962R9569002VCC

Radiation Hardened, Low Noise Quad Operational Amplifiers

Intersil 

HS-5104ARH, HS-5104AEH

Die Characteristics

DIE DIMENSIONS:

95 mils x 99 mils x 19 mils ±1 mils

(2420µm x 2530µm x 483µm ±25.4µm)

INTERFACE MATERIALS:

Glassivation:

Type: Nitride (SI3N4) over Silox (SIO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

Top Metallization:

Type: Al, 1% Cu

Thickness: 16kÅ ±2kÅ

Substrate:

Bipolar Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential (Powered Up):

Unbiased

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2.0 x 105 A/cm2

Transistor Count:

175

Metallization Mask Layout

HS-5104ARH, HS-5104AEH

+IN2

V+

+IN1

-IN2

-IN1

OUT2

OUT3

OUT1

OUT4

-IN3

-IN4

+IN3

V-

+IN4

For additional products, see www.intersil.com/en/products.html

Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted

in the quality certifications found at www.intersil.com/en/support/qualandreliability.html

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time

without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be

accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third

parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

3

FN3025.5

July 12, 2013

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