SBM1040CT(Rev2-1) 데이터 시트보기 (PDF) - Diodes Incorporated.

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SBM1040CT
(Rev.:Rev2-1)

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Diodes Incorporated. 

50

10,000

Single Half-Sine-Wave

(JEDEC Method)

40

TC = 115°C

Total Device

30

1000

20

f = 1MHz

10

0

1

10

100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

7.5

6.0

Note 1

100

0

5 10 15 20 25 30 35 40

VR, REVERSE VOLTAGE (V)

Fig. 4 Typical Capacitance

vs. Reverse Voltage, Per Element

4

3.5

Tj = 125°C

Note 2

3

dc

4.5

Note 2

3.0

1.5

Note 3

0

0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (°C)

Fig. 5 DC Forward Current Derating

2.5

2

1.5

Note 3

1

0.5

0

0 1 2 3 4 5 6 7 8 9 10

IF(AV), AVERAGE FORWARD CURRENT (A)

Fig. 6 Forward Power Dissipation

Notes:

1. TA = TSOLDERING POINT, RqJS = 2.5°C/W, RqSA = 0°C/W.

2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad

dimensions 0.25” x 1.0”. RqJA in range of 20-40°C/W.

3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout

document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of

85-115°C/W.

UNDER DEVELOPMENT

POWERMITE is a registered trademark of Microsemi Corporation.

DS30356 Rev. 2 - 1

3 of 3

www.diodes.com

SBM1040CT

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