MBR6030PT(2015) 데이터 시트보기 (PDF) - Diodes Incorporated.
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MBR6030PT Datasheet PDF : 3 Pages
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PART OBSOLETE
MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
TO-3P
· Low Power Loss, High Efficiency
Dim Min
Max
· High Surge Capability
A 1.88 2.08
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free
H
A
B 4.68 5.36
B
C 20.63 22.38
Wheeling, and Polarity Protection Application
· Lead Free Finish, RoHS Compliant (Note 3)
D 18.5 21.5
S
J
E
2.1
2.4
Mechanical Data
· Case: TO-3P
· Case Material: Molded Plastic. UL Flammability
E Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Finish - Bright Tin. Plated Leads Solderable per
T MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Ordering Information: See Last Page
E · Marking: Type Number
L · Weight: 5.6 grams (approximate)
C
R
K
P
Q
L
N
G
D
E
MM
G 0.51 0.76
H 15.38 16.25
J
1.90
2.70
K 2.9Æ 3.65Æ
L
3.78
4.50
M
5.2
5.7
N 0.89 1.53
P 1.82 2.46
Q 2.92 3.23
R 11.70 12.84
S
¾
6.10
All Dimensions in mm
O Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
S For capacitive load, derate current by 20%.
Characteristic
B Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
O RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
MBR
6030PT
30
21
MBR
6035PT
35
25
MBR
6040PT
40
28
MBR
6045PT
Unit
45
V
32
V
Average Rectified Output Current
@ TC = 125°C
(Note 1)
IO
60
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
500
A
(JEDEC Method)
Forward Voltage Drop
@ IF = 30A, TC = 25°C
0.62
@ IF = 30A, TC = 125°C VFM
0.55
V
@ IF = 60A, TC = 25°C
0.75
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 100°C
IRM
1.0
50
mA
Typical Total Capacitance (Note 2)
CT
650
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
1.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
MBR6030PT - MBR6045PT
DS30053 Rev. 5 - 4
1 of 3
www.diodes.com
July 2015
ã Diodes Incorporated
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