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H9931 데이터 시트보기 (PDF) - Supertex Inc

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H9931 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HV9931
Ordering Information
DEVICE
Package Options
8-Lead SOIC (Narrow Body)
HV9931
HV9931LG-G
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Value
V to GND
IN
-0.5V to +470V
VDD to GND
-0.3V to +13.5V
CS1, CS2 to GND
-0.3V to VDD + 0.3V
PWMD to GND
-0.3V to (VDD + 0.3V)
GATE to GND
-0.3V to (VDD + 0.3V)
Continuous Power Dissipation (TA = +25°C)
Also limited by package power dissipation limit, whichever is lower.
8-Lead SOIC (derate 9mW/°C
above +25°C)
900mW
Operating temperature range
-40°C to +85°C
Junction temperature
+125°C
Storage temperature range
-65°C to +150°C
Stresses beyond those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Pin Configuration
VIN 1
8 RT
CS1 2
7 CS2
HV9931
GND 3
6 VDD
GATE 4
5 PWMD
8-Lead SOIC
Product Marking
YWW
H9931
LLLL
Y = Last Digit of Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
8-Lead SOIC
Electrical Characteristics
(The * denotes the specifications which apply over the full operating junction temperature range of -40°C < TA < +85°C, otherwise the specifications are
at TA = 25°C, VIN = 12V, unless otherwise noted)
Symbol Parameter
Min Typ Max Units Conditions
Input
VINDC
IINSD
Input DC supply voltage range*
Shut-down mode supply
current*
8
- 450 V DC input voltage
-
0.5 1
mA PWMD connected to GND, VIN = 12V
Internal Regulator
VDD
Internally regulated voltage*
VDD, line
Line regulation of VDD
VDD, load
UVLO
UVLO
Load regulation of VDD
VDD undervoltage lockout
threshold
VDD undervoltage lockout
hysteresis
7.12
0
0
6.45
-
7.5 7.88
-
1
- 100
6.7 6.95
500 -
V
VIN = 8, IDD(ext) = 0, PWMD = VDD,
CGATE = 500pF
V
VIN = 8 - 450V, IDD(ext) = 0, 500pF at
GATE; RT = 226kΩ, PWMD = VDD
mV IDD(ext) = 0 – 1mA, 500pF at GATE;
RT = 226kΩ, PWMD = VDD
V VIN rising
mV ---
2

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