HVL145(2002) 데이터 시트보기 (PDF) - Renesas Electronics

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HVL145
(Rev.:2002)

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Renesas Electronics 

HVL145

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

V

60

V

R

Forward current

I

50

mA

F

Power dissipation

Pd

100

mW

Junction temperature

Tj

125

°C

Storage temperature

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

V

F

Reverse current

IR

Capacitance

C

Forward resistance rf

ESD-Capability *1 —

——

——





100 —

0.9 V

100 nA

0.45 pF

1.8 Ω

—V

I = 2 mA

F

VR = 60 V

VR = 1 V, f = 1 MHz

IF = 10 mA, f = 100 MHz

C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse.

Notes: 1. Failure criterion ; IR ≥ 100 nA at VR = 60 V

2. Please do not use the soldering iron due to avoid high stress to the EFP package.

3. The material of lead is exposed for cutting plane. Therefor, soldering nature of lead tip part is

considered as unquestioned. Please kindly consider soldering nature.

Rev.0, Oct. 2002, page 2 of 6

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