HY27UF081G2AFIP 데이터 시트보기 (PDF) - Hynix Semiconductor

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HY27UF081G2AFIP

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Hynix Semiconductor 

HY27UF(08/16)1G2A Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

NAND INTERFACE

- x8 or x16 bus width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

SUPPLY VOLTAGE

- VCC = 2.7 to 3.6V : HY27UFxx1G2A

Memory Cell Array

= (2K+64) Bytes x 64 Pages x 1,024 Blocks

= (1K+32) Bytes x 64 Pages x 1,024 Blocks

FAST BLOCK ERASE

- Block erase time: 2ms (Typ.)

STATUS REGISTER

ELECTRONIC SIGNATURE

- 1st cycle: Manufacturer Code

- 2nd cycle: Device Code

- 3rd cycle: Internal chip number, Cell Type, Number of

Simultaneously Programmed Pages.

- 4th cycle: Page size, Block size, Organization, Spare

size

SERIAL NUMBER OPTION

PAGE SIZE

- x8 device : (2K+64 spare) Bytes

: HY27UF081G2A

- x16 device : (1K+32 spare) Bytes

: HY27UF161G2A

CHIP ENABLE DON’T CARE

- Simple interface sith microcontroller

DATA RETENTION

- 100,000 Program/Erase cycles (with 1bit/528byte ECC)

- 10 years Data Retention

BLOCK SIZE

- x8 device: (128K + 4K spare) Bytes

- x16 device: (64K + 2K spare) Words

PAGE READ / PROGRAM

- Random access: 25us (max.)

- Sequential access: 30ns (min.)

- Page program time: 200us (typ.)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

CACHE PROGRAM

- Internal (2048+64) Byte buffer to improve the program

throughput

PACKAGE

- HY27UF(08/16)1G2A-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27UF(08/16)1G2A-T (Lead)

- HY27UF(08/16)1G2A-TP (Lead Free)

- HY27UF081G2A-S(P)

: 48-Pin USOP1 (12 x 17 x 0.65 mm)

- HY27UF081G2A-S (Lead)

- HY27UF081G2A-SP (Lead Free)

- HY27UF081G2A-F(P)

: 63-Ball FBGA (9 x 11 x 1.0 mm)

- HY27UF081G2A-F (Lead)

- HY27UF081G2A-FP (Lead Free)

Rev 0.4 / Jun. 2007

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