IXZ4DF18N50 데이터 시트보기 (PDF) - IXYS CORPORATION

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IXZ4DF18N50

RF Power MOSFET & DRIVER

IXYS CORPORATION 

IXZ4DF18N50

RF Power MOSFET & DRIVER

Driver / MOSFET Combination

DEIC-515 Driver combined with IXZ318N50 MOSFET

Gate driver matched to MOSFET

500 Volts

19 A

0.29 Ohms

Features

• Isolated substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

• Low Rds(ON)

• Very low insertion inductance(<2nH)

• No beryllium oxide (BeO) or other hazardous materials

• Built using the advantages and compatibility of CMOS and IXYS

HDMOS™ processes

• Latch-up protected

• Low quiescent supply current

Advantages

• Optimized for RF and high speed

• Easy to mount—no insulators needed

• High power density

• Single package reduces size and heat sink area

Applications

• Class D or E Switching

Amplifier

• Multi MHz Switch Mode

Power Supplies (SMPS)

Description

The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination

specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The

IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less

than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire

operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation

where combiners are used. Its features and wide safety margin in operating voltage and power make the

IXZ4DF18N50 unmatched in performance and value.

The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques

to minimize stray lead inductances for optimum switching performance. The IXZ4DF18N50 is a surface-

mountable device.

Figure 1.

Functional Diagram

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