IC42S16800L 데이터 시트보기 (PDF) - Integrated Circuit Solution Inc

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IC42S16800L

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Solution Inc 

IC42S81600/IC42S81600L

IC42S16800/IC42S16800L

DC CHARACTERISTICS 1

(At VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)

Symbol Parameter

Test Condition Organization

-6

ICC1(1) Operating Current

One Bank active,

x8

120

tRC = tRC (min.)

CL=3, BL=1

x16

140

tCLK = tCLK (min.)

ICC2P Precharge Standby Current CKE ≤ VIL (MAX)

x8/x16

2

(In Power-Down Mode)

tCK = 15 ns

ICC2PS

CKE ≤ VIL (MAX)

x8/x16

1

CLK ≤ VIL (MAX)

ICC2N(2) Precharge Standby Current CS ≥ VCC -0.2V

x8/x16

25

(In Non Power-Down Mode) CKE ≥ VIH (MIN)

tCK = 15 ns

ICC2NS

CS ≥ VCC -0.2V

x8/x16

15

CKE ≥ VIH (MIN)

CKE ≤ VIL (MAX)

All input signals are stable.

ICC3N(2) Active Standby Current

CS ≥ VCC -0.2V

x8/x16

30

(In Non Power-Down Mode) CKE ≥ VIH (MIN)

tCK = 15 ns

ICC3NS

CS ≥ VCC -0.2V

x8/x16

20

CKE ≥ VIH (MIN)

CKE ≤ VIL (MAX)

All input signals are stable.

ICC4

Operating Current

(In Burst Mode)

All Banks active

x8

170

BL=4

CL latency = 3

tCK = tCK (MIN)

x16

180

ICC5

Auto-Refresh Current

tRC = tRC (MIN)

tCLK = tCLK (MIN)

x8/x16

180

ICC6(3, 4) Self-Refresh Current

CKE ≤ 0.2V

x8/x16, normal 2

x8/x16, Low power 0.8

Notes:

1. ICC(max) is specified at the output open condition.

2. Input signals are changed one time during 30ns.

3. Normal version: IC42S81600/IC42S16800

4. Low power version: IC42S81600L/IC42S16800L

DC CHARACTERISTICS 2

(VDD = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)

Parameter

Input Leakage Current (Inputs)

Output Leakage Current (I/O pins)

High Level Output Voltage

Low Level Output Voltage

Symbol

II (L)

IO (L)

VOH (DC)

VOL (DC)

Test Condition

0 ≤ VIN ≤ VDD (MAX)

Pins not under test = 0V

0 ≤ VOUT ≤ VDD (MAX)

DQ# in H - Z., DOUT is disabled

IOH = –2 mA

IOL = 2 mA

Max.

Unit

-7

-8

100

100

mA

120

120

mA

2

2

mA

1

1

mA

25

25

mA

15

15

mA

30

30

mA

20

20

mA

120

120

mA

130

130

mA

160

160

mA

2

2

mA

0.8

0.8

mA

Min Max Unit

–10

10

µA

–5

5

µA

2.4

—

V

—

0.4

V

Integrated Circuit Solution Inc.

7

DR023-0E 6/11/2004

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