IC42S16101 데이터 시트보기 (PDF) - Integrated Circuit Solution Inc

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IC42S16101

512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Solution Inc 

IC42S16101

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter

Test Condition

Speed Min. Max. Unit

IIL

Input Leakage Current

0V ≤ VIN ≤ VCC, with pins other than

the tested pin at 0V

IOL

Output Leakage Current

Output is disabled

0V ≤ VOUT ≤ VCC

VOH

Output High Voltage Level IOUT = –2 mA

VOL

Output Low Voltage Level

IOUT = +2 mA

–5

5

µA

–10 10 µA

2.4 —

V

— 0.4

V

ICC1

Operating Current(1,2)

One Bank Operation, CAS latency = 3

-5

— 150 mA

Burst Length=1

tRC ≥ tRC (min.)

IOUT = 0mA

-6

— 145 mA

-7

— 140 mA

ICC2

Precharge Standby Current CKE ≤ VIL (MAX)

(In Power-Down Mode)

tCK = tCK (MIN)

—

—

2

mA

ICC3

Active Standby Current

CKE ≥ VIH (MIN)

(In Non Power-Down Mode)

tCK = tCK (MIN)

— —5 50 mA

— —6 45 mA

— —7 40 mA

ICC4

Operating Current

(In Burst Mode)(1)

tCK = tCK (MIN)

IOUT = 0mA

-5

— 150 mA

-6

— 140 mA

-7

— 130 mA

ICC5

Auto-Refresh Current

tRC = tRC (MIN)

-5

— 100 mA

-6

—

90 mA

-7

—

80 mA

ICC6

Self-Refresh Current

CKE ≤ 0.2V

—

—

1

mA

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time

increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each

memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load.

6

Integrated Circuit Solution Inc.

DR025-0F 01/17/2005

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