6116LA(2001) 데이터 시트보기 (PDF) - Integrated Device Technology
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6116LA Datasheet PDF : 11 Pages
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IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Pin Configurations
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
GND
1
24
2
23
3
4
5
P24-2
P24-1
D24-2
22
21
20
6
D24-1 19
7 SO24-2 18
8 SO24-4 17
9
16
10
15
11
14
12
13
VCC
A8
A9
WE
OE
A10
CS
I/O 7
I/O 6
I/O 5
, I/O4
I/O3
3089 drw 02
DIP/SOIC/SOJ
Top View
Pin Description
Name
A0 - A10
I/O0 - I/O7
CS
WE
OE
VCC
GND
Description
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power
Ground
3089 tbl 01
Military, Commercial, and In dustrial Temperature Ranges
Capacitance (TA = +25°C, f = 1.0 MHZ)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance
VIN = 0V
8
pF
CI/O
I/O Capacitance
VOUT = 0V
8
pF
NOTE:
3089 tbl 03
1. This parameter is determined by device characterization, but is not production
tested.
Absolute Maximum Ratings(1)
Symbol
Rating
Com'l.
Mil.
Unit
VTERM(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0 -0.5 to +7.0 V
TA
Operating
Temperature
0 to +70 -55 to +125 oC
TBIAS
Temperature
Under Bias
-55 to +125 -65 to +135 oC
TSTG
Storage Temperature -55 to +125 -65 to +150 oC
PT
Power Dissipation
1.0
1.0
W
IOUT
DC Output Current
50
50
mA
NOTES:
3089 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Truth Table(1)
Mode
CS
OE
Standby
H
X
Read
L
L
Read
L
H
Write
L
X
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
WE
I/O
X
High-Z
H
DATAOUT
H
High-Z
L
DATAIN
3089 tbl 02
2
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