6116LA(2001) 데이터 시트보기 (PDF) - Integrated Device Technology
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6116LA Datasheet PDF : 11 Pages
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IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and In dustrial Temperature Ranges
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90 6116SA120 6116SA150
6116LA90 6116LA120 6116LA150
Symbol
Parameter
Com'l
Power & Ind Mil Mil Only Mil Only
Mil Only
Mil Only
Mil Only
Unit
ICC1 Operating Power Supply
Current, CS < VIL,
SA
80 90
90
90
90
90
90
mA
Outputs Open
VCC = Max., f = 0
LA 75 85
85
85
85
85
85
ICC2 Dynamic Operating
Current, CS < VIL,
SA 100 100
100
100
100
100
Outputs Open
VCC = Max., f = fMAX(2)
LA 90 95
90
90
85
85
90
mA
85
ISB Standby Power Supply
SA
25 25
25
25
25
25
25
mA
Current (TTL Level)
CS > VIH, Outputs Open
VCC = Max., f = fMAX(2)
LA 20 20
20
20
25
15
15
ISB1 Full Standby Power
Supply Current (CMOS
SA
2
10
10
10
10
10
10
mA
Level), CS > VHC,
VCC = Max., VIN < VLC
or VIN > VHC, f = 0
LA 0.1 0.9
0.9
0.9
0.9
0.9
0.9
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
3089 tbl 09
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC 0.2V)
Typ.(1)
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
VDR
ICCDR
tCDR(3)
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
____
2.0
____
____
____
____
MIL.
____
0.5
1.5
200
300
COM'L.
____
0.5
1.5
20
30
CS > VHC
VIN > VHC or < VLC
____
0
____
____
____
tR(3)
Operation Recovery Time
IILII
Input Leakage Current
tRC(2)
____
____
____
____
____
____
____
2
2
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Unit
V
µA
ns
ns
µA
3089 tbl 10
4
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