IDT6116LA35D(2013) 데이터 시트보기 (PDF) - Integrated Device Technology
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IDT6116LA35D Datasheet PDF : 11 Pages
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IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA35
6116LA35
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120 6116SA150
6116LA120 6116LA150
Symbol
Parameter
Power
ICC1 Operating Power Supply
Current, CS < VIL,
SA
Outputs Open
VCC = Max., f = 0
LA
ICC2 Dynamic Operating
Current, CS < VIL,
SA
Outputs Open
VCC = Max., f = fMAX(2)
LA
ISB Standby Power Supply
SA
Current (TTL Level)
CS > VIH, Outputs Open
VCC = Max., f = fMAX(2)
LA
ISB1 Full Standby Power
Supply Current (CMOS
SA
Level), CS > VHC,
VCC = Max., VIN < VLC
or VIN > VHC, f = 0
LA
Mil Only
90
85
115
105
35
30
10
0.9
Mil Only
90
85
100
95
25
20
10
0.9
Mil Only
90
85
100
90
25
20
10
0.9
Mil Only
90
85
100
90
25
20
10
0.9
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Mil Only
90
85
100
85
25
25
10
0.9
Mil Only
90
85
100
85
25
15
10
0.9
Mil Only
Unit
90
mA
85
90
mA
85
25
mA
15
10
mA
0.9
3089 tbl 09
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
Typ.(1)
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
____
2.0
____
____
____
____
ICCDR
Data Retention Current
MIL.
____
0.5
1.5
200
300
COM'L.
____
0.5
1.5
20
30
tCDR(3)
Chip Deselect to Data
Retention Time
CS > VHC
VIN > VHC or < VLC
____
0
____
____
____
tR(3)
Operation Recovery Time
IILII
Input Leakage Current
tRC(2)
____
____
____
____
____
____
____
2
2
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Unit
V
μA
ns
ns
μA
3089 tbl 10
4
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