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6116LA70 데이터 시트보기 (PDF) - Integrated Device Technology

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6116LA70
IDT
Integrated Device Technology IDT
6116LA70 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
GND
1
24
2
23
3
P24-2 22
4
P24-1 21
5
D24-2 20
6
D24-1 19
7 SO24-2 18
8
&
17
9 S024-4 16
10
15
11
14
12
13
VCC
A8
A9
WE
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
DIP/SOIC/SOJ
TOP VIEW
PIN DESCRIPTIONS
A0–A13
I/O0–I/O7
CS
WE
OE
VCC
GND
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power
Ground
CAPACITANCE (TA = +25°C, F = 1.0 MHZ)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance VIN = 0V
8 pF
CI/O
I/O Capacitance
VOUT = 0V
8 pF
NOTE:
3089 tbl 03
1. This parameter is determined by device characterization, but is not
production tested.
3089 drw 02
3089 tbl 01
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Rating
Commercial Military Unit
Terminal Voltage
VTERM(2) with Respect to GND –0.5 to + 7.0 –0.5 to +7.0 V
Operating
TA
Temperature
0 to + 70 –55 to +125 °C
TBIAS
Temperature
Under Bias
–55 to + 125 –65 to +135 °C
TSTG
Storage
Temperature
–55 to + 125 –65 to +150 °C
Power
PT
Dissipation
1.0
1.0
W
IOUT
DC Output Current
50
50
mA
NOTES:
3089 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. VTERM must not exceed VCC +0.5V.
TRUTH TABLE(1)
Mode
CS
OE
WE
Standby
H
X
X
Read
L
L
H
Read
L
H
H
Write
L
X
L
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
I/O
High-Z
DATAOUT
High-Z
DATAIN
3089 tbl 02
5.1
2

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