6116LA90 데이터 시트보기 (PDF) - Integrated Device Technology

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6116LA90

CMOS STATIC RAM 16K (2K x 8 BIT)

Integrated Device Technology 

IDT6116SA/LA

CMOS STATIC RAM 16K (2K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, All Temperature Ranges)

6116SA15(1)

6116LA15(1)

6116SA20

6116LA20

6116SA25

6116LA25

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

WRITE CYCLE

tWC Write Cycle Time

15

—

20

—

25

—

tCW Chip Select to End-of-

13

—

15

—

17

—

Write

tAW Address Valid to End-

14

—

15

—

17

—

of-Write

tAS

Address Set-up Time

0

—

0

—

0

—

tWP Write Pulse Width

12

—

12

—

15

—

tWR Write Recovery Time

0

—

0

—

0

—

tWHZ(3) Write to Output

in High-Z

—

7

—

8

—

16

tDW Data to Write Time

Overlap

12

—

12

—

13

—

tDH(4) Data Hold from Write

0

—

0

—

0

—

Time

tOW(3,4) Output Active from

End-of-Write

0

—

0

—

0

—

6116SA35

6116LA35

Min. Max. Unit

35

—

ns

25

—

ns

25

—

ns

0

—

ns

20

—

ns

0

—

ns

—

20

ns

15

—

ns

0

—

ns

0

—

ns

3089 tbl 14

AC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, All Temperature Ranges)

6116SA45 6116SA55(2) 6116SA70(2) 6116SA90(2) 6116SA120(2) 6116SA150(2)

6116LA45 6116LA55(2) 6116LA70(2) 6116LA90(2) 6116LA120(2) 6116LA150(2)

Symbol

Parameter

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit

WRITE CYCLE

tWC Write Cycle Time

45

— 55

— 70 —

90 — 120 — 150 — ns

tCW Chip Select to End of

Write

30

— 40

— 40 —

55 — 70 —

90 — ns

tAW Address Valid to End

of Write

30

— 45

— 65 —

80 — 105 — 120 — ns

tAS

Address Set-up Time

0

—5

— 15 —

15 — 20 —

20 — ns

tWP Write Pulse Width

25

— 40

— 40 —

55 — 70 —

90 — ns

tWR Write Recovery Time

0

—5

—

5—

5

—

5

—

10 — ns

tWHZ(3) Write to Output

in High-Z

—

25 —

30 — 35

— 40 — 40

— 40 ns

tDW Data to Write Time

Overlap

20

— 25

— 30 —

30 — 35 —

40 — ns

tDH(4)

Data Hold from Write

Time

0

—5

—

5—

5

—

5

—

10 — ns

tOW(3,4) Output Active from

0

—0

—

0—

0

—

0

—

0 — ns

End of Write

NOTES:

3089 tbl 15

1. 0°C to +70°C temperature range only.

2. –55°C to +125°C temperature range only.

3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.

4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary

over voltage and temperature, the actual tDH will always be smaller than the actual tOW.

5.1

8

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