6116LA70 데이터 시트보기 (PDF) - Integrated Device Technology

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6116LA70

CMOS STATIC RAM 16K (2K x 8 BIT)

Integrated Device Technology 

IDT6116SA/LA

CMOS STATIC RAM 16K (2K x 8-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

TIMING WAVEFORM OF WRITE CYCLE NO. 1, (WE CONTROLLED TIMING) (1, 2, 5, 7)

tWC

ADDRESS

CS

tAW

tAS

tWP(7)

(3)

tWR

tCHZ (6)

WE

DATA OUT

DATA IN

tWHZ(6)

PREVIOUS DATA VALID (4)

(6)

tOW

tDW

tDH

DATA VALID

DATA (4)

VALID

3089 drw 09

TIMING WAVEFORM OF WRITE CYCLE NO. 2, (CS CONTROLLED TIMING) (1, 2, 3, 5, 7)

tWC

ADDRESS

tAW

CS

(3)

tWR

tAS

tCW

WE

tDW

tDH

DATA IN

DATA VALID

3089 drw 10

NOTES:

1. WE or CS must be HIGH during all address transitions.

2. A write occurs during the overlap of a LOW CS and a LOW WE.

3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.

4. During this period, the I/O pins are in the output state and the input signals must not be applied.

5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.

6. Transition is measured ±500mV from steady state.

7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the

I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not

apply and the write pulse is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW.

5.1

9

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