IDT71128S12Y 데이터 시트보기 (PDF) - Integrated Device Technology

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IDT71128S12Y

CMOS Static RAM 1 Meg (256K x 4-Bit) Revolutionary Pinout

Integrated Device Technology 

IDT 71128 CMOS Static RAM

1 Meg (256K x 4-bit) Revolutionary Pinout

Commercial and Industrial Temperature Ranges

DC Electrical Characteristics

(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Conditions

VCC = Max., VIN = GND to VCC

VCC = Max., CS = VIH, VOUT = GND to VCC

IOL = 8mA, VCC = Min.

IOH = -4mA, VCC = Min.

Min.

Max. Unit

___

5

µA

___

5

µA

___

0.4

V

2.4

___

V

3483 tbl 06

DC Electrical Characteristics(1)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

71128S12

Symbol

Parameter

Com'l.

Ind.

ICC Dynamic Operating Current

155

155

CS < VIL, Outputs Open, VCC = Max., f = fMAX(2)

ISB Standby Power Supply Current (TTL Level)

40

40

CS > VIH, Outputs Open, VCC = Max., f = fMAX(2)

Full Standby Power Supply Current (CMOS Level)

10

10

ISB1 CS > VHC, Outputs Open, VCC = Max., f = 0(2)

VIN < VLC or VIN > VHC

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.

71128S15

Com'l.

Ind.

150

150

40

40

10

10

71128S20

Com'l.

Ind. Unit

145

145

mA

40

40

mA

10

10

mA

3483 tbl 07

AC Test Conditions

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

AC Test Load

GND to 3.0V

3ns

1.5V

1.5V

See Figure 1 and 2

3483 tbl 08

AC Test Loads

DATA OUT

30pF

5V

480Ω

255Ω

3483 drw 03

Figure 1. AC Test Load

6.432

DATA OUT

5pF*

5V

480Ω

255Ω

3483 drw 04

*Including jig and scope capacitance.

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

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