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IDT7130SA100CB 데이터 시트보기 (PDF) - Integrated Device Technology

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IDT7130SA100CB
IDT
Integrated Device Technology IDT
IDT7130SA100CB Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature Supply Voltage Range(3)
7130X20(2)
7140X20(2)
Com'l Only
7130X25
7140X25
Com'l, Ind
& Military
7130X35
7140X35
Com'l
& Military
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
20
____
25
____
35
____
ns
tAA
Address Access Time
____
20
____
25
____
35
ns
tACE
Chip Enable Access Time
____
20
____
25
____
35
ns
tAOE
Output Enable Access Time
____
11
____
12
____
20
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,4)
tHZ
Output High-Z Time(1,4)
tPU
Chip Enable to Power Up Time(4)
tPD
Chip Disable to Power Down Time(4)
3
____
3
____
3
____
ns
0
____
0
____
0
____
ns
____
10
____
10
____
15
ns
0
____
0
____
0
____
ns
____
20
____
25
____
35
ns
2689 tbl 09a
7130X55
7140X55
Com'l, Ind
& Military
7130X100
7140X100
Com'l, Ind
& Military
Symbol
Parameter
Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
55
____
100
____
ns
tAA
Address Access Time
____
55
____
100
ns
tACE
Chip Enable Access Time
____
55
____
100
ns
tAOE
Output Enable Access Time
____
25
____
40
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time(1,4)
tHZ
Output High-Z Time(1,4)
tPU
Chip Enable to Power Up Time(4)
tPD
Chip Disable to Power Down Time(4)
3
____
10
____
ns
5
____
5
____
ns
____
25
____
40
ns
0
____
0
____
ns
____
50
____
50
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage Output Test Load (Figure 2).
2. PLCC, TQFP and STQFP packages only.
3. 'X' in part numbers indicates power rating (SA or LA).
4. This parameter is guaranteed by device characterization, but is not production tested.
.
2689 tbl 09b
8

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