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DGT408BRP4540 데이터 시트보기 (PDF) - Dynex Semiconductor
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DGT408BRP4540
Reverse Blocking Gate Turn-off Thyristor
Dynex Semiconductor
DGT408BRP4540 Datasheet PDF : 6 Pages
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DGT408BRP
0.9VD
VD
0.9IT
dVD/dt
IT
VD VDM
0.1VD
td tr
dIFG/dt
tgt
IFG
0.1IFG
VFG
tw1
VDP
tgs
ITAIL
tgf
tgq
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
V(RG)BR
VRG
Recommended gate conditions:
I
TCM
= 800A
I
FG
= 30A
I
G(ON)
= 4A d.c.
t
w1(min)
= 20µs
I
GQM
= 300A
di
GQ
/dt = 30A/µs
Q
GQ
=
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Fig.2 General switching waveforms
4/6
www.dynexsemi.com
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