IDT7134LA55FB 데이터 시트보기 (PDF) - Integrated Device Technology
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IDT7134LA55FB Datasheet PDF : 9 Pages
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IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) VLC = 0.2V, VHC = VCC - 0.2V
Symbol
Parameter
Test Condition
Min. Typ.(1)
VDR
ICCDR
tCDR(3)
tR(3)
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
VCC = 2V
CE ≥ VHC
VIN ≥ VHC or < VLC
2.0
—
MIL.
—
100
COM’L. —
100
0
—
tRC(2)
—
NOTES:
1. VCC = 2V, TA = +25°C, and are not production tested.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but not production tested.
Max.
—
4000
1500
—
—
Unit
V
µA
ns
ns
2720 tbl 07
DATA RETENTION WAVEFORM
VCC
4.5V
tCDR
CE
VIH
DATA RETENTION MODE
VDR ≥ 2V
VDR
4.5V
tR
VIH
2720 drw 05
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1 and 2
2720 tbl 08
DATAOUT
775Ω
+5V
1250Ω
30pF *
2720 drw 06
Figure 1. AC Output Test Load
DATAOUT
775Ω
+5V
1250Ω
5pF *
2720 drw 07
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
*Including scope and jig
6.04
4
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