FQP6N45 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQP6N45 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15 V
10 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4.0
3.5
3.0
VGS = 10V
2.5
VGS = 20V
2.0
1.5
1.0
0.5
※ Note : TJ = 25℃
0.0
0
2
4
6
8 10 12 14 16 18
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
oss
400
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
200
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. V = 50V
2. 25DS0μs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V =0V
2. 25G0Sμs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 90V
VDS = 225V
V = 360V
8
DS
6
4
2
※ Note : ID = 6.2A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
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