IDT71V124SA10Y 데이터 시트보기 (PDF) - Integrated Device Technology

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IDT71V124SA10Y

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Integrated Device Technology 

3.3V CMOS Static RAM

1 Meg (128K x 8-Bit)

Center Power &

Ground Pinout

IDT71V124SA

Features

x 128K x 8 advanced high-speed CMOS static RAM

x JEDEC revolutionary pinout (center power/GND) for

reduced noise

x Equal access and cycle times

– Commercial: 10/12/15/20ns

– Industrial: 10/12/15/20ns

x One Chip Select plus one Output Enable pin

x Inputs and outputs are LVTTL-compatible

x Single 3.3V supply

x Low power consumption via chip deselect

x Available in a 32-pin 300- and 400-mil Plastic SOJ, and

32-pin Type II TSOP packages.

Description

The IDT71V124 is a 1,048,576-bit high-speed static RAM organized

as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability

CMOS technology. This state-of-the-art technology, combined with inno-

vative circuit design techniques, provides a cost-effective solution for high-

speed memory needs. The JEDEC center power/GND pinout reduces

noise generation and improves system performance.

The IDT71V124 has an output enable pin which operates as fast as

5ns, with address access times as fast as 9ns available. All bidirec-

tional inputs and outputs of the IDT71V124 are LVTTL-compatible and

operation is from a single 3.3V supply. Fully static asynchronous

circuitry is used; no clocks or refreshes are required for operation.

Functional Block Diagram

A0

•

•

•

ADDRESS

•

•

•

DECODER

A16

1,048,576-BIT

MEMORY ARRAY

I/O0 - I/O7

8

8

WE

OE

CONTROL

CS

LOGIC

I/O CONTROL

8

.

3873 drw 01

NOVEMBER 2003

1

©2003- Integrated Device Technology, Inc.

DSC-3873/07

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