BDX34 데이터 시트보기 (PDF) - Comset Semiconductors
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BDX34 Datasheet PDF : 4 Pages
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PNP BDX34 – BDX34A – BDX34B – BDX34C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCBO=-45 V
TC=100°C
BDX34
-
-
VCBO=-60 V
ICBO
Collector-Base Cutoff
Current
TC=100°C
VCBO=-80 V
TC=100°C
BDX34A -
BDX34B -
-
-5 mA
-
VCBO=-100 V
TC=100°C
BDX34C -
-
BDX34
IC=-4.0 A, IB=-8.0 mA
BDX34A
BDX34B
-
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
BDX34C
BDX34
- -2.5
V
IC=-3.0 A, IB=-6.0 mA
BDX34A
BDX34B
-
- -2.5
BDX34C
BDX34
VF
Forward Voltage (pulse
method)
IF=-8 A
BDX34A
BDX34B
-
- 4.0 V
BDX34C
VBE
Base-Emitter Voltage (*) IC=-4.0 A, VCE=-3.0V
BDX34
BDX34A
-
IC=-3.0 A, VCE=-3.0V
BDX34B
BDX34C
-
- -2.5
V
- -2.5
hFE
DC Current Gain (*)
VCE=-3.0 V, IC=-4.0 A
BDX34
BDX34A
750
-
VCE=-3.0 V, IC=-3.0 A
BDX34B
BDX34C
750
-
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
3/4
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