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G08T120 데이터 시트보기 (PDF) - Infineon Technologies
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G08T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
Infineon Technologies
G08T120 Datasheet PDF : 12 Pages
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TrenchStop
®
Series
IGW08T120
q
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
°
C,
V
CC
=600V,
I
C
=8A,
V
GE
=-15/15V,
R
G
=81
Ω
,
L
σ
2)
=180nH,
C
σ
2)
=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
40
23
450
70
0.67
0.7
1.37
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=150
°
C
,
V
CC
=600V,
I
C
=8A,
V
GE
=-15/15V,
R
G
= 81
Ω
,
L
σ
2)
=180nH,
C
σ
2)
=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
Unit
max.
- ns
-
-
-
- mJ
-
-
2)
Leakage inductance
L
σ
an d Stray capacity
C
σ
due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.6 Nov. 09
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