G08T120 데이터 시트보기 (PDF) - Infineon Technologies

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G08T120

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGW08T120

q

td(off)

100ns tf

td(on)

10ns

tr

td(off)

tf

100 ns

td(on)

10 ns

tr

1ns

5A

10A

15A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=81Ω,

Dynamic test circuit in Figure E)

1 ns

5Ω

50Ω

100Ω 150Ω 200Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=8A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=8A, RG=81Ω,

Dynamic test circuit in Figure E)

7V

6V

5V

max.

typ.

4V

min.

3V

2V

1V

0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.3mA)

Power Semiconductors

6

Rev. 2.6 Nov. 09

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