G08T120 데이터 시트보기 (PDF) - Infineon Technologies

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G08T120

Low Loss IGBT in TrenchStop® and Fieldstop technology

Infineon Technologies 

TrenchStop® Series

IGW08T120

q

VCE

600V

30A

30A

600V

400V

200V

20A

20A

IC

10A

10A

400V

200V

IC

0V

0A

0us

0.5us

1us

1.5us

t, TIME

Figure 21. Typical turn on behavior

(VGE=0/15V, RG=81Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

VCE

0A

0V

0us

0.5us

1us

1.5us

t, TIME

Figure 22. Typical turn off behavior

(VGE=15/0V, RG=81Ω, Tj = 150°C,

Dynamic test circuit in Figure E)

100K/W D=0.5

0.2

0.1

0.05

10-1K/W

R,(K/W)

0.187

0.575

0.589

0.350

R1

τ, (s)

1.73*10-1

2.75*10-2

2.57*10-3

2.71*10-4

R2

0.02

0.01

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

10µs 100µs 1ms 10ms 100ms

tP, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

9

Rev. 2.6 Nov. 09

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