G01H1202(2007) 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
G01H1202 Datasheet PDF : 12 Pages
| |||
IGB01N120H2
1000ns
t
d(off)
100ns
t
f
10ns
0A
t
d(on)
t
r
1A
2A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω,
dynamic test circuit in Fig.E)
t
d(off)
100ns
t
f
10ns
t
d(on)
t
r
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω,
dynamic test circuit in Fig.E)
100ns
t
d(off)
t
f
10ns
t
d(on)
t
r
1ns
50Ω
100Ω
150Ω
200Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E)
6V
5V
4V
3V
m ax.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.03mA)
Power Semiconductors
6
Rev. 2.4 Oct. 07
Share Link: 