G01H1202 데이터 시트보기 (PDF) - Infineon Technologies

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G01H1202

HighSpeed 2-Technology

Infineon Technologies 

IGP01N120H2,

IGD01N120H2

IGB01N120H2

0.6mJ

1) Eon and Ets include losses

E1

due to diode recovery.

ts

0.4mJ

0.2mJ

E

off

E1

on

0.0mJ

0A

1A

2A

3A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 241Ω,

dynamic test circuit in Fig.E )

0.25mJ

1) Eon and Ets include losses

due to diode recovery.

E1

ts

0.20mJ

0.15mJ

E1

on

0.10mJ

0.05mJ

50Ω

E

off

100Ω

150Ω

200Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 1A,

dynamic test circuit in Fig.E )

0.25mJ

1) Eon and Ets include losses

due to diode recovery.

0.20mJ

E1

ts

0.15mJ

E1

0.10mJ

on

E

off

0.05mJ

0.00mJ

-40°C

25°C

100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 1A, RG = 241Ω,

dynamic test circuit in Fig.E )

0.06mJ

I =1A, T =150°C

C

J

0.04mJ

0.02mJ

I =0.3A, T =150°C

C

J

I =1A, T =25°C

C

J

I =0.3A, T =25°C

C

J

0.00mJ

0V/us

1000V/us

2000V/us

3000V/us

dv/dt, VOLTAGE SLOPE

Figure 16. Typical turn off switching energy

loss for soft switching

(dynamic test circuit in Fig. E)

Power Semiconductors

7

Rev. 2, Mar-04

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