G01H1202 데이터 시트보기 (PDF) - Infineon Technologies
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G01H1202 Datasheet PDF : 13 Pages
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IGP01N120H2,
IGD01N120H2
IGB01N120H2
D=0.5
0.2
100K/W
0.1
0.05
0.02
10-1K/W
0.01
R,(K/W)
2.5069
1.1603
0.8327
τ, (s)
0.00066
0.00021
0.00426
R1
R2
10-2K/W
single pulse
C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms
100ms
tp, PULSE WIDTH
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
100pF
C
iss
10pF
C
oss
C
rss
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
20V
U =240V
15V
CE
10V
U =960V
CE
5V
0V
0nC
5nC
10nC
15nC
QGE, GATE CHARGE
Figure 18. Typical gate charge
(IC = 1A)
1000V
1.0A
800V
0.8A
600V
0.6A
400V
0.4A
0.2A
200V
0.0A
0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
tp, PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=220Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2, Mar-04
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