K06T60(2013) 데이터 시트보기 (PDF) - Infineon Technologies

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K06T60
(Rev.:2013)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

TRENCHSTOP™ Series

IKA06N60T

TJ=175°C

8A

6A

TJ=25°C

4A

2A

0A

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

(VR = 400V, IF = 6A,

Dynamic test circuit in Figure E)

-500A/µs

-400A/µs

TJ=25°C

-300A/µs

-200A/µs

TJ=175°C

-100A/µs

0A/µs

200A/µs 400A/µs 600A/µs 800A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(VR = 400V, IF = 6A,

Dynamic test circuit in Figure E)

10A

8A

6A

4A

TJ=175°C

2A

25°C

0A

0,0V

0,5V

1,0V

1,5V

2,0V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

2,0V IF=12A

6A

1,5V

3A

1,0V

0,5V

0,0V

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

IFAG IPC TD VLS

10

Rev. 2.5 20.09.2013

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