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ILD1-X007 데이터 시트보기 (PDF) - Vishay Semiconductors

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ILD1-X007 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
VR
IF
IFSM
Pdiss
Value
6.0
60
2.5
100
1.3
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter reverse voltage
Collector current
Power dissipation
Derate linearly from 25 °C
Test condition
t < 1.0 ms
Part
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
Symbol
VCER
VCER
VCER
VCER
VCER
VCER
IC
IC
Pdiss
Value
50
50
70
70
70
70
50
400
200
2.6
Unit
V
V
V
V
V
V
mA
mA
mW
mW/°C
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
Creepage
Clearance
Isolation resistance
Package power dissipation
Test condition
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
2.0 mm from case bottom
Symbol
VISO
RIO
RIO
Ptot
Tstg
Tamb
Tj
Tsld
Value
5300
7.0
7.0
1012
1011
250
3.3
- 40 to + 150
- 40 to + 100
100
260
Unit
VRMS
mm
mm
mW
mW/°C
°C
°C
°C
°C
www.vishay.com
2
Document Number 83646
Rev. 1.4, 05-Nov-04

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