INA-32063 데이터 시트보기 (PDF) - HP => Agilent Technologies
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INA-32063 Datasheet PDF : 11 Pages
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2
Absolute Maximum Ratings
Symbol
Vd
Pin
Tj
TSTG
Parameter
Device Voltage,
RF output to ground
CW RF Input Power
Junction Temperature
Storage Temperature
Units
V
Absolute
Maximum[1]
6.0
dBm
°C
°C
+7.0
150
-65 to 150
Thermal Resistance[2]:
θjc = 170°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board)
INA-32063 Electrical Specifications, TC = 25°C, ZO = 50 Ω,Vd = 3 V
Symbol
Parameters and Test Conditions
Units Min. Typ. Max. Std.
Dev.[4]
|S 21|2
Gain in 50 Ω system
f = 0.9 GHz dB
16.8
f = 1.9 GHz
15.5[3] 17.8
0.39
f = 2.4 GHz
18.2
NF50
P1dB
Noise Figure
Output Power at 1 dB Gain Compression
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
dBm
4.4
0.21
3.6
4.8
4.0
IP3
Output Third Order Intercept Point
f = 0.9 GHz dBm
15.3
f = 1.9 GHz
14.4
f = 2.4 GHz
11.5
VSWRin
VSWRout
Ιd
Input VSWR
Output VSWR
Device Current
f = 0.1 – 2.4 GHz
f = 0.1 – 2.4 GHz
mA
1.1:1
1.6:1
20 25[3] 1.1
Notes:
3. Guaranteed specifications are 100% tested in production.
4. Standard deviation number is based on measurement of a large number of parts from three non-consecutive wafer lots
during the initial characterization of this product, and is intended to be used as an estimate for distribution of the
typical specification.
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