INF85116 데이터 시트보기 (PDF) - Integral Corp.
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INF85116 Datasheet PDF : 4 Pages
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INF85116
2048 х 8 -Bit CMOS EEPROM with I2С-bus interface
The INF85116N is an 16-Kbits (2048 x 8-bit) floating
gate Electrically Erasable Programmable Read Only
Memory (EEPROM). Power consumption is low due to
the full CMOS technology used. The programming
voltage is generated on-chip, using a voltage multi-
plier. As data bytes are received and transmitted via
the serial I2C-bus, a package using eight pins is suffi-
cient. Only one INF85116N device is required to sup-
port all eight blocks of 256 x 8-bit each.
FEATURES
• Low power CMOS
-maximum active current 1.0 mA
-maximum standby current 10 µA (at 5.5 V), typical 4 µA
• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits during 20 years
( at 55oC )
• Single supply (Ucc=2,7 ÷ 5,5 V);
• Automatically increased word's address
• On-chip voltage multiplier
• Serial input/output I2C-bus
• 1000000 ERASE/WRITE cycles per byte
• Internal timer for writing (no external components)
• Write operations: multi byte write mode to 32 bytes
• Write - protection input
• Power-on-reset
Temperature range: -40oC ÷ +85oC
Simbol
n. c.
n. c
n. c
Uss
SDA
SCL
WP
Ucc
PIN DESCRIPTION
Pin
Description
1 not connected
2 not connected
3 not connected
4 negative supply voltage
5 serial data input/output ( I2C-
6 bus)
7 serial clock input ( I2C-bus)
8 write - protection input
positive supply voltage
PIN CONFIGURATION
n. c. 1
8 Ucc
n. c. 2
7
WP
INF85116N
n. c. 3
6 SCL
Uss 4
5 SDA
Table 1. Quick reference data
Symbol
Parameter
1
min
max
Unit
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