IPP034N03LG 데이터 시트보기 (PDF) - Infineon Technologies
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IPP034N03LG Datasheet PDF : 10 Pages
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Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol Conditions
IPP034N03L G
IPB034N03L G
min.
Values
typ.
Unit
max.
C iss
-
C oss
V GS=0 V, V DS=15 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=30 A, R G=1.6 Ω
-
tf
-
4000
1400
81
9.2
6.4
35
5.4
5300 pF
1900
-
- ns
-
-
-
Q gs
-
12
- nC
Q g(th)
-
6.3
-
Q gd
V DD=15 V, I D=30 A,
-
5.6
-
Q sw
V GS=0 to 4.5 V
-
11
-
Qg
-
25
-
V plateau
-
2.9
-V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
51
-
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
21
- nC
Q oss
V DD=15 V, V GS=0 V
-
37
-
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
80 A
-
-
320
-
0.83
1.1 V
-
-
20 nC
6) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2010-02-19
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