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IPP034N03LG 데이터 시트보기 (PDF) - Infineon Technologies
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IPP034N03LG
OptiMOS™3 Power-Transistor
Infineon Technologies
IPP034N03LG Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
1 Power dissipation
P
tot
=f(
T
C
)
100
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
100
IPP034N03L G
IPB034N03L G
80
80
60
60
40
40
20
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
10
2
DC
1 µs
10 µs
100 µs
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
0.5
10
1
10
0
10
-1
10
-1
Rev. 2.0
1 ms
10 ms
10
0
10
1
V
DS
[V]
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
10
2
0.01
0
10
-6
0
10
-5
0
10
-4
0
10
-3
0
10
-2
0
10
-1
1
10
0
t
p
[s]
page 4
2010-02-19
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