IRF1405ZL 데이터 시트보기 (PDF) - International Rectifier

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IRF1405ZL

HEXFET® Power MOSFET

International Rectifier 

IRF1405Z/S/L

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

10

4.5V

1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

10

4.5V

1

0.1

20µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 150°C

TJ = 25°C

10

VDS = 25V

20µs PULSE WIDTH

1

4

6

8

10

12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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200

175

150

TJ = 25°C

125

100

TJ = 175°C

75

50

25

0

0 25 50 75 100 125 150 175 200

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

3

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