IRF1405ZL-7PPBF 데이터 시트보기 (PDF) - International Rectifier
부품명
상세내역
제조사
IRF1405ZL-7PPBF Datasheet PDF : 11 Pages
| |||
IRF1405ZS/L-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55 ––– –––
––– 0.054 –––
––– 3.7 4.9
2.0 ––– 4.0
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 88A
V VDS = VGS, ID = 150µA
gfs
Forward Transconductance
150 ––– ––– S VDS = 25V, ID = 88A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 150 230 nC ID = 88A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 37 –––
––– 64 –––
e VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
––– 16 ––– ns VDD = 28V
tr
Rise Time
––– 140 –––
ID = 88A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 170 –––
––– 130 –––
d RG = 5.0Ω
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5360 –––
––– 1310 –––
––– 340 –––
––– 6080 –––
––– 920 –––
––– 1700 –––
and center of die contact
S
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 150
MOSFET symbol
D
A showing the
––– ––– 590
integral reverse
G
––– ––– 1.3
––– 63 95
––– 160 240
e p-n junction diode.
S
V TJ = 25°C, IS = 88A, VGS = 0V
e ns TJ = 25°C, IF = 88A, VDD = 28V
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
L=0.064mH, RG = 25Ω, IAS = 88A, VGS =10V.
tested to this value in production.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
Coss eff. is a fixed capacitance that gives the same
soldering techniques refer to application note #AN-994.
charging time as Coss while VDS is rising from 0 to 80% Rθ is measured at TJ of approximately 90°C.
VDSS.
Solder mounted on IMS substrate.
2
www.irf.com
Share Link: 