IRF2807ZS 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

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IRF2807ZS

AUTOMOTIVE MOSFET

Kersemi Electronic Co., Ltd. 

IRF2807Z/S/L

www.kersemi.com

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

75 ––– –––

––– 0.073 –––

––– 7.5 9.4

2.0 ––– 4.0

V VGS = 0V, ID = 250µA

f V/°C Reference to 25°C, ID = 1mA

mΩ VGS = 10V, ID = 53A

V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

67 ––– ––– S VDS = 25V, ID = 53A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 75V, VGS = 0V

––– ––– 250

VDS = 75V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -20V

Qg

Total Gate Charge

––– 71 110 nC ID = 53A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– 19 29

––– 28 42

f VDS = 60V

VGS = 10V

td(on)

Turn-On Delay Time

––– 18 ––– ns VDD = 38V

tr

Rise Time

––– 79 –––

ID = 53A

td(off)

tf

Turn-Off Delay Time

Fall Time

––– 40 –––

––– 45 –––

f RG = 6.2Ω

VGS = 10V

LD

Internal Drain Inductance

––– 4.5 ––– nH Between lead,

D

LS

Internal Source Inductance

6mm (0.25in.)

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 3270 –––

––– 420 –––

––– 240 –––

––– 1590 –––

––– 280 –––

––– 440 –––

and center of die contact

S

pF VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 60V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 89

MOSFET symbol

D

A showing the

––– ––– 350

integral reverse

G

––– ––– 1.3

––– 46 69

––– 80 120

f p-n junction diode.

S

V TJ = 25°C, IS = 53A, VGS = 0V

f ns TJ = 25°C, IF = 53A, VDD = 25V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

‚ Limited by TJmax, starting TJ = 25°C, L = 0.12mH,

RG = 25Ω, IAS = 53A, VGS =10V. Part not

recommended for use above this value.

ƒ ISD ≤ 53A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C.

„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

… Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

‡ This value determined from sample failure population. 100%

tested to this value in production.

ˆ This is applied to D2Pak, when mounted on 1" square PCB

( FR-4 or G-10 Material ). For recommended footprint and

soldering techniques refer to application note #AN-994.

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