IRF7101 데이터 시트보기 (PDF) - International Rectifier

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IRF7101

HEXFET® Power MOSFET

International Rectifier 

IRF7101

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LD

LS

Ciss

Coss

Crss

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

20 ––– ––– V VGS = 0V, ID = 250µA

––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.10 Ω

––– ––– 0.15

VGS = 10V, ID = 1.8A ƒ

VGS = 4.5V, ID = 1.0A ƒ

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

1.1 ––– ––– S VDS = 15V, ID = 3.5A ƒ

––– ––– 2.0 µA VDS = 20V, VGS = 0V

––– ––– 250

VDS = 16V, VGS = 0V, TJ = 125 °C

––– ––– 100 nA VGS = 12V

––– ––– -100

VGS = - 12V

––– ––– 15

ID = 1.8A

––– ––– 2.0

––– ––– 3.6

nC VDS = 16V

VGS = 10V

––– 7.0 –––

VDD = 10V

––– 10 ––– ns ID = 1.8A

––– 24 –––

RG = 8.2Ω

––– 30 –––

RD = 26Ω

D

––– 4.0 –––

nH Between lead,6mm(0.25in.)

from package and center G

––– 6.0 –––

of die contact

S

––– 320 –––

VGS = 0V

––– 250 ––– pF VDS = 15V

––– 75 –––

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 2.0

––– ––– 14

––– ––– 1.2

––– 36 54

––– 41 62

MOSFET symbol

D

showing the

A

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ

ns TJ = 25°C, IF = 1.7A

nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

„ Surface mounted on FR-4 board, t ≤ 10sec.

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