IRF634N 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRF634N Datasheet PDF : 8 Pages
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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
10 TJ = 175 °C
1
TJ = 25 °C
20 µs Pulse Width
0.1
VDS = 50 V
4.0
5.0
6.0
7.0
8.0
9.0
91033_03
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1200
1000
800
600
Ciss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
400
Crss
200
0
1
10
102
103
91033_05
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
3.5
ID = 7.9 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40- 20 0 20 40 60 80 100 120 140 160 180
91033_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
20 ID = 4.8 A
16
VDS = 200 V
VDS = 125 V
12
VDS = 50 V
8
4
For test circuit
see figure 13
0
0
10
20
30
40
91033_06
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
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