IRF7205 데이터 시트보기 (PDF) - KEXIN Industrial

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IRF7205

HEXFET Power MOSFET

KEXIN Industrial 

SMD Type

MOSFIECT

KRF7205(IRF7205)

Electrical Characteristics Ta = 25

Parameter

Drain-to-Source Breakdown Voltage

Symbol

VDSS

Static Drain-to-Source On-Resistance

RDS(on)

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

VGS(th)

gfs

IDSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Internal Drain Inductance

LD

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Reverse Recovery Time

trr

Reverse RecoveryCharge

Qrr

Forward Turn-On Time

ton

Continuous Source Current Body Diode)

IS

Pulsed Source Current Body Diode) *2

ISM

Diode Forward Voltage

VSD

*1 Pulse width 300 s; duty cycle 2%.

*2 Repetitive rating; pulse width limited bymax

Testconditons

VGS = 0V, ID = -250A

VGS = -10V, ID = -4.6A*1

VGS = -4.5V, ID = -2.0A*1

VDS = VGS, ID = -250 A

VDS = -15V, ID = -4.6A*1

VDS = -24V, VGS = 0V

VDS = -16V, VGS = 0V, TJ = 70

VGS = -20V

VGS = 20V

ID = -4.6A

VDS = -15V

VGS = -10V,*1

VDD = -15V

ID = -1.0A

RG = 6.0

RD = 10 *1

Min Typ Max Unit

-30

V

0.070

0.130

-1.0

-3.0 V

6.6

S

-1.0

A

-5.0

-100

nA

100

27 40

5.2

nC

7.5

14 30

21 60

ns

97 150

71 100

2.5

nH

4.0

VGS = 0V

870

VDS = -10V

720

pF

f = 1.0MHz

220

TJ = 25 , IF =-4.6A

70 100 ns

di/dt = 100A/ s*1

100 180 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

-2.5

A

-15

TJ = 25 , IS = -1.25A, VGS = 0V*1

-1.2 V

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