IRF9952TR 데이터 시트보기 (PDF) - International Rectifier

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IRF9952TR

HEXFET® Power MOSFET

International Rectifier 

IRF9952

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

N-Ch 30 — —

P-Ch -30 — — V

N-Ch — 0.015 —

P-Ch — 0.015 — V/°C

N-Ch

—

—

0.08 0.10

0.12 0.15

P-Ch

— 0.165 0.250

— 0.290 0.400

Ω

VGS = 0V, ID = 250µA

VGS = 0V, ID = -250µA

Reference to 25°C, ID = 1mA

Reference to 25°C, ID = -1mA

VGS = 10V, ID = 2.2A „

VGS = 4.5V, ID = 1.0A „

VGS = -10V, ID = -1.0A „

VGS = -4.5V, ID = -0.50A „

N-Ch 1.0 — —

P-Ch -1.0 — —

V

VDS = VGS, ID = 250µA

VDS = VGS, ID = -250µA

N-Ch — 12 —

P-Ch — 2.4 —

S

VDS = 15V, ID = 3.5A „

VDS = -15V, ID = -2.3A

„

N-Ch — — 2.0

VDS = 24V, VGS = 0V

P-Ch —

N-Ch —

P-Ch —

N-P ––

N-Ch —

P-Ch —

N-Ch —

P-Ch —

N-Ch —

P-Ch —

— -2.0

— 25 µA

— -25

— ±100 nA

6.9 14

6.1 12

1.0 2.0

1.7 3.4 nC

1.8 3.5

1.1 2.2

VDS = -24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

VDS = -24V, VGS = 0V, TJ = 125°C

VGS = ±20V

N-Channel

ID = 1.8A, VDS = 10V, VGS = 10V

„

P-Channel

ID = -2.3A, VDS = -10V, VGS = -10V

N-Ch — 6.2 12

P-Ch — 9.7 19

N-Channel

N-Ch — 8.8 18

VDD = 10V, ID = 1.0A, RG = 6.0Ω,

P-Ch — 14 28

RD = 10Ω

N-Ch — 13 26 ns

„

P-Ch — 20 40

N-Ch — 3.0 6.0

P-Ch — 6.9 14

P-Channel

VDD = -10V, ID = -1.0A, RG = 6.0Ω,

RD = 10Ω

N-Ch — 190 —

N-Channel

P-Ch — 190 —

VGS = 0V, VDS = 15V, ƒ = 1.0MHz

N-Ch — 120 — pF

P-Ch — 110 —

P-Channel

N-Ch — 61 —

VGS = 0V, VDS = -15V, ƒ = 1.0MHz

P-Ch — 54 —

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

N-Ch — — 1.7

IS

Continuous Source Current (Body Diode)

P-Ch — — -1.3 A

N-Ch — — 16

ISM

Pulsed Source Current (Body Diode) 

P-Ch — — 16

VSD

Diode Forward Voltage

N-Ch — 0.82 1.2 V TJ = 25°C, IS = 1.25A, VGS = 0V ƒ

P-Ch — -0.82 -1.2

TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Ch — 27 53 ns N-Channel

P-Ch — 27 54

TJ = 25°C, IF =1.25A, di/dt = 100A/µs

N-Ch — 28 57 nC P-Channel

„

P-Ch — 31 62

TJ = 25°C, IF = -1.25A, di/dt = 100A/µs

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec.

P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)

P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.

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