IRF9952TR 데이터 시트보기 (PDF) - International Rectifier

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IRF9952TR

HEXFET® Power MOSFET

International Rectifier 

100

V GS

TOP

15 V

10 V

7.0 V

5.5 V

4.5 V

4.0 V

3.5 V

BOTT OM 3.0V

10

N-Channel

100

V GS

TOP

15 V

10 V

7.0 V

5.5 V

4.5 V

4.0 V

3.5 V

BOTT OM 3.0V

10

IRF9952

3.0V

20µs P ULSE WIDTH

1

TJ = 25 °C

A

0.1

1

10

V D S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

3 .0V

20µs P ULSE WIDTH

1

TJ = 15 0°C

A

0.1

1

10

VD S , D rain-to-S ource Voltage (V)

Fig 2. Typical Output Characteristics

100

100

TJ = 25°C

10

TJ = 150°C

10

TJ = 150°C

1

TJ = 25°C

VDS = 10V

20µs PU LSE W ID TH

1

A

3.0

3.5

4.0

4.5

5.0

5.5

6.0

VGS , Ga te-to-So urce Voltage (V )

Fig 3. Typical Transfer Characteristics

0.1

0.4

VG S = 0V A

0.6

0.8

1.0

1.2

1.4

V SD , Source-to-D rain V oltage (V )

Fig 4. Typical Source-Drain Diode

Forward Voltage

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