IRF9952PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30
P-Ch -30
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
0.015
0.015
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
Ω
VGS = 10V, ID = 2.2A
VGS = 4.5V, ID = 1.0A
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.50A
N-Ch 1.0
P-Ch -1.0
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 12
P-Ch 2.4
S
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
N-Ch 2.0
VDS = 24V, VGS = 0V
P-Ch
N-Ch
-2.0
25
µA
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch -25
VDS = -24V, VGS = 0V, TJ = 125°C
N-P ±100 nA VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
nC
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Ch 6.2 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.7 19
8.8 18
14 28
13 26
20 40
3.0 6.0
6.9 14
ns
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0Ω,
RD = 10Ω
N-Ch 190
N-Channel
P-Ch 190
VGS = 0V, VDS = 15V, = 1.0MHz
N-Ch 120 pF
P-Ch 110
P-Channel
N-Ch 61
VGS = 0V, VDS = -15V, = 1.0MHz
P-Ch 54
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 1.7
IS
Continuous Source Current (Body Diode)
P-Ch -1.3 A
N-Ch 16
ISM
Pulsed Source Current (Body Diode)
P-Ch 16
VSD
Diode Forward Voltage
N-Ch 0.82 1.2
P-Ch -0.82 -1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V
TJ = 25°C, IS = -1.25A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
27
27
53
54
ns
N-Channel
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
N-Ch
P-Ch
28
31
57
62
nC
P-Channel
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A.
2
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