SIHFBC30AL-E3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFBC30AL-E3 Datasheet PDF : 12 Pages
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IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
TJ = 150° C
TJ = 25° C
1
0.1
0.4
VGS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 3.6A
16
12
VDS = 480V
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
10us
100us
1
1ms
TC = 25°C
TJ = 150°C
Single Pulse
0.1
10
100
10ms
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91109
S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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