SIHFBC30ASTR-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFBC30ASTR-E3 Datasheet PDF : 8 Pages
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IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
Vishay Siliconix
400
ID
TOP
1.6A
2.3A
BOTTOM 3.6A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
740
720
700
680
660
640
0.0
1.0
2.0
3.0
4.0
IAV , Avalanche Current ( A)
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanache Current
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
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