IRFM210 데이터 시트보기 (PDF) - Fairchild Semiconductor

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IRFM210

200V N-Channel MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TC = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

∆BVDSS

/ ∆TJ

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

VGS = 0 V, ID = 250 µA

200 --

ID = 250 µA, Referenced to 25°C -- 0.2

IDSS

Zero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V

VDS = 160 V, TC = 125°C

--

--

--

--

IGSSF

IGSSR

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V

--

--

--

--

On Characteristics

VGS(th)

RDS(on)

Gate Threshold Voltage

Static Drain-Source

On-Resistance

gFS

Forward Transconductance

VDS = VGS, ID = 250 µA

2.0 --

VGS = 10 V, ID = 0.39 A

-- 1.16

VDS = 40 V, ID = 0.39 A (Note 4) --

1.1

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 175

-- 30

-- 6.8

Switching Characteristics

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 100 V, ID = 3.3 A,

RG = 25 Ω

-- 5.2

-- 35

-- 20

(Note 4, 5)

--

25

VDS = 160 V, ID = 3.3 A,

-- 7.2

VGS = 10 V

-- 1.3

(Note 4, 5) --

3.5

--

--

10

100

100

-100

4.0

1.5

--

225

40

9.0

20

80

50

60

9.3

--

--

V

V/°C

µA

µA

nA

nA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

-- 0.77

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

--

6.0

A

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.77 A

--

--

1.5

V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 3.3 A,

-- 106

--

ns

dIF / dt = 100 A/µs

(Note 4)

--

0.37

--

µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 101mH, IAS = 0.77A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 3.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

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