LH28F400SUB-Z0 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F400SUB-Z0 Datasheet PDF : 34 Pages
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LH28F400SUB-Z0
4M (512K × 8, 256K × 16) Flash Memory
BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS
Bus Operations for Word-Wide Mode (BYT» E » = VIH)
MODE
RP» CE » OE »
WE
A0 DQ0-15 RY »/BY » NOTE
Read
VIH
VIL
VIL
VIH
X
DOUT
X 1, 2, 7
Output Disable
VIH
VIL
VIH
VIH
X High-Z
X 1, 6, 7
Standby
VIH
VIH
X
X
X High-Z
X
1, 6, 7
Deep Power-Down VIL
X
X
X
X High-Z VOH
1, 3
Manufacturer ID
VIH
VIL
VIL
VIH
VIL 00B0H VOH
4
Device ID
VIH
VIL
VIL
VIH
VIH
ID
VOH
4
Write
VIH
VIL
VIH
VIL
X
DIN
X 1, 5, 6
Bus Operations for Byte-Wide Mode (BYT» E » = VIL)
MODE
RP» CE » OE »
WE
A0
DQ0-7 RY »/BY» NOTE
Read
VIH
VIL
VIL
VIH
X
DOUT
X 1, 2, 7
Output Disable
VIH
VIL
VIH
VIH
X High-Z
X 1, 6, 7
Standby
VIH
VIH
X
X
X High-Z
X
1, 6, 7
Deep Power-Down VIL
X
X
X
X High-Z VOH
1, 3
Manufacturer ID
VIH
VIL
VIL
VIH
VIL
B0H
VOH
4
Device ID
VIH
VIL
VIL
VIH
VIH
ID
VOH
4
Write
VIH
VIL
VIH
VIL
X
DIN
X 1, 5, 6
NOTES:
1. X can be VIH or VIL for address or control pins except for RY »/BY », which is either VOL or VOH.
2. RY »/BY » output is open drain. When the WSM is ready, Erase is suspended or the device is in deep
power-down mode, RY »/BY » will be at VOH if it is tied to VCC through a resistor. When the RY /» BY »
at VOL is independent of OE » while a WSM operation is in progress.
3. RP » at GND ± 0.2 V ensures the lowest deep power-down current.
4. A0 at VIL provide manufacturer ID codes. A0 at VIH provide device ID codes. Device ID code = 23H (x8).
Device ID Code = 6623H (x16). All other addresses are set to zero.
5. Commands for different Erase operations, Data Write Operations, and Lock-Block operations can only
be successfully completed when VPP = VPPH.
6. While the WSM is running, RY »/BY » in Level-Mode (default) stays at VOL until all operations are complete.
RY »/BY » goes to VOH when the WSM is not busy or in erase suspend mode.
7. RY »/BY » may be at VOL while the WSM is busy performing various operations. For example, a status
register read during a write operation.
6
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